| 標題：Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study |
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| 學年 | 89 |
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| 學期 | 1 |
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| 出版（發表）日期 | 2000/12/01 |
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| 作品名稱 | Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study |
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| 作品名稱（其他語言） | |
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| 著者 | Chang, Y. D.; Chiu, A. P.; Pong, W. F.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Chiou, J. W.; Jan, C. J.; Tseng, P. K.; Wu, R. T.; Chung, S. C.; Tsang, K. L.; Lin, I. N.; Cheng, H. F. |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | College Park: American Institute of Physics |
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| 著錄名稱、卷期、頁數 | Applied Physics Letters 77(26), pp.4362-4364 |
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| 摘要 | X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp2- and sp3-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively. |
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| 關鍵字 | |
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| 語言 | 英文 |
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| ISSN | 1077-3118;0003-6951 |
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| 期刊性質 | 國外 |
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| 收錄於 | |
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| 產學合作 | |
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| 通訊作者 | Pong, W. F. |
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| 審稿制度 | |
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| 國別 | 美國 |
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| 公開徵稿 | |
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| 出版型式 | 紙本;電子版 |
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| 相關連結 | |
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