教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
學年94
學期2
出版(發表)日期2006/05/01
作品名稱Electronic structures of group-III–nitride nanorods studied by x-ray absorption, x-ray emission, and Raman spectroscopy
作品名稱(其他語言)
著者Pao, C. W.; Babu, P. D.; Tsai, H. M.; Chiou, J. W.; Ray, S. C.; Yang, S. C.; Chien, F. Z.; Pong, W. F.; Tsai, M.-H. ; Hsu, C. W. ; Chen, L. C.; Chen, C. C.; Chen, K. H.; Lin, H.-J.; Lee, J. F.; Guo, J. H.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 88(22), pp.223113(3pages)
摘要Nitrogen (N) and metal (Al, Ga, and In) K-edge x-ray absorption near-edge structure (XANES), x-ray emission spectroscopy (XES), and Raman scattering measurements were performed to elucidate the electronic structures of group-III–nitride nanorods and thin films of AlN, GaN, and InN. XANES spectra show slight increase of the numbers of unoccupied N p states in GaN and AlN nanorods, which may be attributed to a slight increase of the degree of localization of conduction band states. The band gaps of AlN, GaN, and InN nanorods are determined by an overlay of XES and XANES spectra to be 6.2, 3.5, and 1.9 eV, respectively, which are close to those of AlN and GaN bulk/films and InN polycrystals.
關鍵字nanostructured materials; X-ray absorption; X-ray emission spectra; Raman spectra; XANES; aluminium compounds; gallium compounds; indium compounds; III-V semiconductors; wide band gap semiconductors; conduction bands; energy gap
語言英文
ISSN0003-6951
期刊性質國外
收錄於SCI
產學合作
通訊作者Pong, W. F.
審稿制度
國別美國
公開徵稿
出版型式紙本
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