教師資料查詢 | 類別: 期刊論文 | 教師: 許世杰 Hsu, Shih-chieh (瀏覽個人網頁)

標題:Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate
學年100
學期2
出版(發表)日期2012/06/01
作品名稱Characterization study of GaN-based epitaxial layer and light-emitting diode on nature-patterned sapphire substrate
作品名稱(其他語言)
著者Lin, H.Y.; Chen, Y.J.; Chang, C.L.; Li, X.F.; Kuo, C.H.; Hsu, S.C.; Liu, C.Y.
單位淡江大學化學工程與材料工程學系
出版者New York: Cambridge University Press
著錄名稱、卷期、頁數Journal of Materials Research 27(6), pp.971-977
摘要Chemical wet etching on c-plane sapphire wafers by three etching solutions (H3PO4, H2SO4, and H3PO4/H2SO4 mixing solution) was studied. Among these etching agents, the mixing H3PO4/H2SO4 solution has the fastest etching rate (1.5 μm/min). Interestingly, we found that H2SO4 does not etch the c-plane sapphire wafer in thickness; instead, a facet pyramidal pattern is formed on the c-plane sapphire wafer. GaN light-emitting diode (LED) epitaxial structure was grown on the sapphire wafer with the pyramidal pattern and the standard flat sapphire wafer. X-ray diffraction and photoluminescence measurement show that the pyramidal pattern on the sapphire wafer improved crystalline quality but augmented the compressive stress level in the GaN LED epilayer. The horizontal LED chips fabricated on the pyramidal-patterned sapphire wafer have a larger light output than the horizontal LED chips fabricated on the standard flat sapphire wafer by 20%.
關鍵字III–V;Semiconducting
語言英文
ISSN0884-2914;2044-5326
期刊性質國外
收錄於SCI;
產學合作
通訊作者Liu, C.Y.
審稿制度
國別美國
公開徵稿
出版型式,電子版,紙本
相關連結
Google+ 推薦功能,讓全世界都能看到您的推薦!