教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process
學年98
學期1
出版(發表)日期2010/01/01
作品名稱Dielectric and optical properties of electroceramic PBZNZT thin films prepared by pulsed laser deposition process
作品名稱(其他語言)
著者Cheng, Hsiu-Fung; Chen, Yu-Wen; Joseph, P.T.; Hung, Chuan-Chic; Chiang, Horng-Yi; Lin, I-Nan
單位淡江大學物理學系
出版者London: Elsevier Ltd
著錄名稱、卷期、頁數Journal of the European Ceramic Society 30(2), pp.447-451
摘要The 0.6[0.94Pb(Zn1/3Nb2/3)O3 + 0.06BaTiO3] + 0.4[0.48(PbZrO3) + 0.52(PbTiO3)], PBZNZT, thin films were synthesized by pulsed laser deposition (PLD) process. The PBZNZT films possess higher insulating characteristics than the PZT (or PLZT) series materials due to the suppressed formation of defects, therefore, thin-film forms of these materials are expected to exhibit superior ferroelectric properties as compared with the PZT (or PLZT)-series thin films. Moreover, the Ba(Mg1/3Ta2/3)O3 thin film of perovskite structure was used as buffer layer to reduce the substrate temperature necessary for growing the perovskite phase PBZNZT thin films. The PBZNZT thin films of good ferroelectric and dielectric properties (remanent polarization Pr = 26.0 μC/cm2, coercive field Ec = 399 kV/cm, dielectric constant K = 737) were achieved by PLD at 400°C. Such a low substrate temperature technique makes this process compatible with silicon device process. Moreover, thus obtained PBZNZT thin films also possess good optical properties (about 75% transmittance at 800 nm). These results imply that PBZNZT thin films have potential in photonic device applications.
關鍵字Films; Dielectric properties; Ferroelectric properties; Optical properties; Perovskites; Pulsed laser deposition
語言英文
ISSN0955-2219
期刊性質國外
收錄於SCI;EI
產學合作
通訊作者Cheng, Hsiu-Fung
審稿制度
國別英國
公開徵稿
出版型式紙本
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