教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes
學年97
學期2
出版(發表)日期2009/06/01
作品名稱Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes
作品名稱(其他語言)
著者Joseph, P.T.; Tai, N.H.; Chen, C.H.; Niu, H.; Cheng, H.F.; Palnitkar, U.A.; Lin, I.N.
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Journal of Applied Physics 105(12), 123710(7pages)
摘要The single or multienergy nitrogen (N) ion implantation (MENII) processes with a dose (4×1014 ions/cm2) just below the critical dose (1×1015 ions/cm2) for the structural transformation of ultrananocrystalline diamond (UNCD) films were observed to significantly improve the electron field emission (EFE) properties. The single energy N ion implantation at 300 °C has shown better field emission properties with turn-on field (E0) of 7.1 V/μm, as compared to room temperature implanted sample at similar conditions (E0 = 8.0 V/μm) or the pristine UNCD film (E0 = 13.9 V/μm). On the other hand, the MENII with a specific sequence of implantation pronouncedly showed different effect on altering the EFE properties for UNCD films, and the implantation at 300 °C further enhanced the EFE behavior. The best EFE characteristics achieved for the UNCD film treated with the implantation process are E0 = 4.5 V/μm and current density of (Je) = 2.0 mA/cm2 (at 24.5 V/μm). The prime factors for improving the EFE properties are presumed to be the grain boundary incorporation and activation of the implanted N and the healing of induced defects, which are explained based on surface charge transfer doping mechanism.
關鍵字
語言英文
ISSN0021-8979; 1089-7550
期刊性質國外
收錄於SCI;EI
產學合作
通訊作者Tai, N.H.; Lin, I.N.
審稿制度
國別美國
公開徵稿
出版型式紙本
相關連結
Google+ 推薦功能,讓全世界都能看到您的推薦!