教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:On the mechanism of enhancement on electron field emission properties for ultrananocrystalline diamond films due to ion implantation
學年97
學期2
出版(發表)日期2009/05/01
作品名稱On the mechanism of enhancement on electron field emission properties for ultrananocrystalline diamond films due to ion implantation
作品名稱(其他語言)
著者Joseph, P.T.; Tai, N.H.; Chen, C.H.; Niu, H.; Cheng, H.F; Pong, W.F.; Lin, I.N.
單位淡江大學物理學系
出版者Bristol: Institute of Physics Publishing Ltd.
著錄名稱、卷期、頁數Journal of Physics D: Applied Physics 42(10), 105403(6pages)
摘要The effects of N and C ion implantations on modifying the structural and field emission properties of ultrananocrystalline diamond (UNCD) films were investigated. Low dose ion implantations possibly introduced point defects, which were easily removed by the annealing process. The nature of the doping species, N or C, was immaterial. In contrast, high dose N ion implantation induced the formation of the amorphous phase, which was converted into the graphitic phase after annealing, and improved the field emission properties (Je was increased to ~6.3 mA cm−2 at 20 V µm−1). However, the high dose C ion implantation induced the graphitic phase directly, which degraded the field emission characteristics, i.e. Je was lowered to ~0.6 mA cm−2 at 20 V µm−1. The variations in the electron field emission properties for ion-implanted UNCD films are accounted for by the nature of the induced defects and the electron transfer doping mechanism.
關鍵字
語言英文
ISSN0022-3727; 1361-6463
期刊性質國外
收錄於SCI;EI
產學合作
通訊作者Lin, I.N.
審稿制度
國別英國
公開徵稿
出版型式紙本
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