教師資料查詢 | 類別: 期刊論文 | 教師: 葉炳宏 Ping-hung Yeh (瀏覽個人網頁)

標題:Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
學年99
學期1
出版(發表)日期2011/01/01
作品名稱Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices
作品名稱(其他語言)
著者Chen, Sheng-Yu; Yeh, Ping-Hung; Wu, Wen-Wei; Chen, Uei-Shin; Chueh, Yu-Lun; Yang, Yu-Chen; Gwo, Shangir; Chen, Lih-Juann
單位淡江大學物理學系
出版者Washington, DC: American Chemical Society
著錄名稱、卷期、頁數ACS Nano 5(11), pp.9202–9207
摘要One crucial challenge for the integrated circuit devices to go beyond the current technology has been to find the appropriate contact and interconnect materials. NiSi has been commonly used in the 45 nm devices mainly because it possesses the lowest resistivity among all metal silicides. However, for devices of even smaller dimension, its stability at processing temperature is in doubt. In this paper, we show the growth of high-quality nanowires of NiSi2, which is a thermodynamically stable phase and possesses low resistivity suitable for future generation electronics devices. The origin of low resistivity for the nanowires has been clarified to be due to its defect-free single-crystalline structure instead of surface and size effects.
關鍵字nickel silicide; nanowires; low resistivity; high aspect ratio; epitaxy; nanoelectronic devices
語言英文
ISSN1936-0851; 1936-086X
期刊性質國外
收錄於
產學合作
通訊作者Chen, Lih-Juann; Wu, Wen-Wei
審稿制度
國別美國
公開徵稿
出版型式紙本
相關連結
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