教師資料查詢 | 類別: 期刊論文 | 教師: 葉炳宏 Ping-hung Yeh (瀏覽個人網頁)

標題:Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
學年99
學期1
出版(發表)日期2010/11/01
作品名稱Controlled large strain of Ni silicide/Si/Ni silicide nanowire heterostructures and their electron transport properties
作品名稱(其他語言)
著者Wu, W. W.; Lu, K. C.; Chen, K. N.; Yeh, Ping-Hung; Wang, C. W.; Lin, Y. C.; Huang, Yu
單位淡江大學物理學系
出版者College Park: American Institute of Physics
著錄名稱、卷期、頁數Applied Physics Letters 97(20), 203110(3pages)
摘要Unusually large and compressively strained Si in nanoheterostructures of Ni silicide/Si/Ni silicide, in which the strain of the Si region can be achieved up to 10%, has been produced with point contact reactions between Si and Ni nanowires in an ultrahigh vacuum transmission electron microscope. The growth rate and relationships between the strain and the spacing of the Si region have been measured. Based on the rate and relationships, we can control the Si dimension and, in turn, the strain of remaining Si can be tuned with appropriate spacing. Since one-dimensional nanoheterostructures may have potential applications in nanoelectronic devices, the existent strain will further affect carrier mobility and piezoresistance coefficients in the Si region. Electrical measurements on the nanodevices from such nanoheterostructures show that the current output closely correlates with the Si channel length and compressive strain.
關鍵字
語言英文
ISSN0003-6951;1077-3118
期刊性質國外
收錄於SCI
產學合作
通訊作者Wu, W. W.; Lu, K. C.; Chen, K. N.
審稿制度
國別美國
公開徵稿
出版型式紙本
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