教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Nanocrystalline diamond microstructures from Ar/H2/CH4-plasma chemical vapour deposition
學年99
學期1
出版(發表)日期2011/01/01
作品名稱Nanocrystalline diamond microstructures from Ar/H2/CH4-plasma chemical vapour deposition
作品名稱(其他語言)
著者Lin, I-Nan; Chen, Huang-Chin; Wang, Chuang-Shern; Lee, Yun-Rue; Lee, Chi-Young
單位淡江大學物理學系
出版者Cambridge: R S C Publications
著錄名稱、卷期、頁數CrystEngComm 13(20), pp.6082-6089
摘要The incorporation of H2 into Ar plasma was observed to markedly alter the microstructure of diamond films. The addition of a small percentage of H2 (<1.5%) into the Ar plasma leads to the presence of stacking faults in plate-like diamond grains, the incorporation of 75% H2 induces the formation of the diamond polymorph (8H). Optical emission spectroscopy indicated that addition of H2 into the Ar/CH4 plasma decreased the CH/C2 ratio and increased the proportion of atomic hydrogen. The small proportion of atomic hydrogen in 1.5%H2–Ar plasma can only induce the formation of (111) stacking faults, resulting in scarcely distributed plate-like diamond grains. The large proportion of atomic hydrogen in 75%H2–Ar plasma causes the rapid growth of diamond grains, leading to the formation of polymorphs of diamond lattices. The tuning on the microstructure of the UNCD films by incorporating either small or large amounts of H2 in Ar-plasma can be attributed to the interaction of H-species with the grain boundary hydrocarbons. Such a capability opens up the potential for applications of UNCD films. Despite the complication in granular structure resulted from the CH4/(Ar–H2) plasma chemical vapour deposition, the formation of microstructures can be explained by the same pathway, the competition of the processes (i) formation of a hydrocarbon passivation layer and the re-activation of the hydrocarbon layer and (ii) secondary nucleation and the enlargement of diamond grains.
關鍵字
語言英文
ISSN1466-8033
期刊性質國外
收錄於SCI
產學合作
通訊作者Lee, Chi-Young
審稿制度
國別英國
公開徵稿
出版型式電子版
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