教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Freestanding Ultrananocrystalline Diamond Films with Homojunction Insulating Layer on Conducting Layer and Their High Electron Field Emission Properties
學年99
學期1
出版(發表)日期2011/01/01
作品名稱Freestanding Ultrananocrystalline Diamond Films with Homojunction Insulating Layer on Conducting Layer and Their High Electron Field Emission Properties
作品名稱(其他語言)
著者Thomas, Joseph P.; Chen, Huang-Chin; Tai, Nyan-Hwa; Lin, I-Nan
單位淡江大學物理學系
出版者Washington, DC: American Chemical Society
著錄名稱、卷期、頁數ACS applied materials & interfaces 3(10), pp.4007–4013
摘要Freestanding ultrananocrystalline diamond (UNCD) films with homojunction insulating layer in situ grown on a conducting layer showed superior electron field emission (EFE) properties. The insulating layer of the films contains large dendrite type grains (400–600 nm in size), whereas the conducting layer contains nanosize equi-axed grains (5–20 nm in size) separated by grain boundaries of about 0.5–1 nm in width. The conducting layer possesses n-type (or semimetallic) conductivity of about 5.6 × 10–3 (Ω cm)−1, with sheet carrier concentration of about 1.4 × 1012 cm–2, which is ascribed to in situ doping of Li-species from LiNbO3 substrates during growth of the films. The conducting layer intimately contacts the bottom electrodes (Cu-foil) by without forming the Schottky barrier, form homojunction with the insulating layer that facilitates injection of electrons into conduction band of diamond, and readily field emitted at low applied field. The EFE of freestanding UNCD films could be turned on at a low field of E0 = 10.0 V/μm, attaining EFE current density of 0.2 mA/cm2 at an applied field of 18.0 V/μm, which is superior to the EFE properties of UNCD films grown on Si substrates with the same chemical vapor deposition (CVD) process. Such an observation reveals the importance in the formation of homojunction on enhancing the EFE properties of materials. The large grain granular structure of the freestanding UNCD films is more robust against harsh environment and shows high potential toward diamond based electronic applications.
關鍵字ultrananocrystalline diamond; freestanding films; homojunction interface; n-type semiconducting diamond; insulating diamond; electron field emission
語言英文
ISSN1944-8244; 1944-8252
期刊性質國外
收錄於SCI
產學合作
通訊作者Thomas, Joseph P.; Lin, I-Nan
審稿制度
國別美國
公開徵稿
出版型式紙本
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