| 標題：Electronic and bonding properties of Fe- and Ni based hydrogenated amorphous carbon thin films by X-ray absorption, valence-band photoemission and Raman spectroscopy |
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| 學年 | 99 |
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| 學期 | 2 |
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| 出版（發表）日期 | 2011/07/01 |
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| 作品名稱 | Electronic and bonding properties of Fe- and Ni based hydrogenated amorphous carbon thin films by X-ray absorption, valence-band photoemission and Raman spectroscopy |
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| 作品名稱（其他語言） | |
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| 著者 | Ray, S. C.; Tsai, H. M.; Pao, C. W.; Chang, W. H.; Pong, W. F.; Chiou, J. W.; Tsai, M.-H. |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | Lausanne: Elsevier S.A. |
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| 著錄名稱、卷期、頁數 | Diamond and Related Materials 20(7), pp.886–890 |
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| 摘要 | Electronic and bonding properties of Me-based hydrogenated amorphous carbon (a-CH:Me, Me = Fe, Ni) thin films have been studied by X-ray absorption near-edge structure (XANES), valence-band photoemission (VB-PES) and Raman spectroscopy. Raman and XANES results show enhancement of the content of sp3-rich diamond-like carbon (DLC) by doping with Fe and Ni. The VB-PES spectrum of a-CH:Fe shows emergence of a prominent feature due to states of sp3-bonded clusters, indicating that a-CH:Fe induced enhancement of DLC structure. The nano-indentation measurement reveals that a-CH:Fe has a greatly enhanced hardness, while electrical resistance measurement shows that a-CH:Me reduces resistivity. |
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| 關鍵字 | M-doped DLC; XANES; VB PES |
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| 語言 | 英文 |
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| ISSN | 0925-9635 |
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| 期刊性質 | 國外 |
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| 收錄於 | SCI |
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| 產學合作 | |
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| 通訊作者 | Ray, S. C.; Pong, W. F. |
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| 審稿制度 | |
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| 國別 | 瑞士 |
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| 公開徵稿 | |
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| 出版型式 | 紙本 |
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| 相關連結 | |
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