Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
學年 93
學期 2
出版(發表)日期 2005-07-01
作品名稱 Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
作品名稱(其他語言)
著者 Yeh, P.H.; Yu, C.H.; Chen, L.J.
單位 淡江大學物理學系
出版者
著錄名稱、卷期、頁數 Nuclear Instruments and Methods in Physics Research Section B 237, pp.167-173
摘要 The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV View the MathML source or As+ to a dose of 3 × 1015 ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on View the MathML source, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
關鍵字 Doping species effect;Metal-induced crystallization;Current-induced crystallization
語言 en
ISSN 0168-583X 1872-9584
期刊性質 國外
收錄於
產學合作
通訊作者
審稿制度
國別 NLD
公開徵稿
出版型式 ,電子版,紙本
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