教師資料查詢 | 類別: 期刊論文 | 教師: 葉炳宏 Ping-hung Yeh (瀏覽個人網頁)

標題:Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
學年93
學期2
出版(發表)日期2005/07/01
作品名稱Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing
作品名稱(其他語言)
著者Yeh, P.H.; Yu, C.H.; Chen, L.J.
單位淡江大學物理學系
出版者
著錄名稱、卷期、頁數Nuclear Instruments and Methods in Physics Research Section B 237, pp.167-173
摘要The effects of electric field and doping species on directional crystallization of a-Si channels under high-density current stressing have been investigated. The a-Si channels were implanted by 30 keV View the MathML source or As+ to a dose of 3 × 1015 ions/cm2. A preferential growth of poly-Si from anode toward cathode was found on View the MathML source, As+ and un-implanted a-Si samples. The results indicate that directional growth of poly-Si is caused by the strong electric field effect on positively charged Ni ions under high-density current stressing.
關鍵字Doping species effect;Metal-induced crystallization;Current-induced crystallization
語言英文
ISSN0168-583X;1872-9584
期刊性質國外
收錄於
產學合作
通訊作者
審稿制度
國別荷蘭
公開徵稿
出版型式,電子版,紙本
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