教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films
學年98
學期1
出版(發表)日期2010/01/01
作品名稱Electron Field Emission of Silicon-Doped Diamond-Like Carbon Thin Films
作品名稱(其他語言)
著者Sekhar Chandra Ray; Sarit Kumar Ghosh; Zivayi Chiguvare; Umesh Palnitkar; Pong, Way-Faung; Lin, I-Nan; Pagona Papakonstantinou; André Michael Strydom
單位淡江大學物理學系
出版者
著錄名稱、卷期、頁數Japanese Journal of Applied Physics 49, 111301(6pages)
摘要In this work we demonstrate that the field emission characteristics of disordered Si-doped diamond-like carbon (DLC) thin films depend not only on properties of the conductive clustered sp2 phase and the insulating sp3 matrix (or sp2/sp3 ratio) but also on the presence of Si–Hn and C–Hn species in the film. The presence of such species reduces the hardness of the film and simultaneously enhances the field emission performance. A turn on electric field (ETOF) of 6.76 V/µm produced a field emission current density of ∼0.2 mA/cm2, when an electric field of ∼20 V/µm was applied. The Fowler–Nordheim (FN) tunneling model is appropriate to explain the field emission mechanism only within limited range of the current density. However, it is found that there is an apparent crossover between space charge limited current (SCLC) and the Frenkel effect due to impurities incorporated during the fabrication of Si-DLC films. This combined effect (SCLC + Frenkel) allows for the emission of electrons from the top of the reduced barriers due to the formation of comparatively soft DLC:Si films. The emission also occurs through tunneling from one conductive cluster (sp2 C=C) to another separated by an insulating matrix (sp3 C–C) after reducing the effective depth of a trap on application of high electric field.
關鍵字
語言英文
ISSN0021-4922; 1347-4065
期刊性質國外
收錄於SCI
產學合作
通訊作者Sekhar Chandra Ray
審稿制度
國別日本
公開徵稿
出版型式紙本
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