教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters
學年96
學期2
出版(發表)日期2008/04/01
作品名稱Fabrication and field emission properties of ultra-nanocrystalline diamond lateral emitters
作品名稱(其他語言)
著者Liou, Yan-lun; Liou, Jyun-cheng; Huang, Jin-hua; Tai, Nyan-Hwa; 林諭男; Lin, I. N.
單位淡江大學物理學系
出版者Elsevier
著錄名稱、卷期、頁數Diamond and Related Materials 17(4-5), pp.776-781
摘要Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor (β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm2 at 12.5 V/μm (100 V applied voltage).
關鍵字Lateral emitter;Electron field emission;UNCD;MPECVD
語言英文
ISSN0925-9635
期刊性質國內
收錄於
產學合作
通訊作者
審稿制度
國別中華民國
公開徵稿
出版型式,電子版
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