Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth
學年 96
學期 2
出版（發表）日期 2008-03-01
作品名稱 Synthesis and characterization of smooth ultrananocrystalline diamond films via low pressure bias-enhanced nucleation and growth
作品名稱（其他語言）
著者 Chen, Y. C.; Zhong, X. Y.; Konicek, A. R.; Grierson, D. S.; Tai, N. H.; 林諭男; Lin, I. N.; Kabius, B.; Hiller, J. M.; Sumant, A. V.; Carpick, R. W.; Auciello, O.
單位 淡江大學物理學系
出版者 American Institute of Physics (AIP)
著錄名稱、卷期、頁數 Applied Physics Letters 92(13), pp.133113(3 pages)
摘要 This letter describes the fundamental process underlying the synthesis of ultrananocrystalline diamond (UNCD) films, using a new low-pressure, heat-assisted bias-enhanced nucleation (BEN)/bias enhanced growth (BEG) technique, involving H<sub>2</sub>/CH<sub>4</sub> gas chemistry. This growth process yields UNCD films similar to those produced by the Ar-rich/CH4 chemistries, with pure diamond nanograins (3–5 nm), but smoother surfaces (~6 nm rms) and higher growth rate (~1 µm/h). Synchrotron-based x-Ray absorption spectroscopy, atomic force microscopy, and transmission electron microscopy studies on the BEN-BEG UNCD films provided information critical to understanding the nucleation and growth mechanisms, and growth condition-nanostructure-property relationships.
關鍵字 atomic force microscopy; diamond; heat treatment; nanostructured materials; nanotechnology; nucleation; transition electron microscopy; XANES
語言 en
ISSN 0003-6951
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出版型式 紙本
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