教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Effect of boron doping on the electron-field-emission properties of nanodiamond films
學年93
學期2
出版(發表)日期2005/03/01
作品名稱Effect of boron doping on the electron-field-emission properties of nanodiamond films
作品名稱(其他語言)
著者李彥志; Lee, Yen-chih; Lin, Su-jien; 林諭男; Lin, I-nan; Cheng, Hsiu-fung
單位淡江大學物理學系
出版者American Institute of Physics (AIP)
著錄名稱、卷期、頁數Journal of Applied Physics 97(5), pp.054310
摘要The electron-field-emission sEFEd behavior of the nanodiamond films was observed to be
pronouncedly superior to that of the diamond films with micrometer- or submicrometer-sized grains,
which is ascribed to the presence of abundant grains boundaries with sp2 bonds. Incorporation of
boron species into the nanodiamond films further improves the EFE properties for the films. The
best EFE properties achieved are turn-on field E0=18 V/mm with EFE capacity J=0.7 mA/cm2 at
around 30 V/mm applied field. However, boron doping into the nanodiamond films does not result
in consistent boron-content dependence of the EFE properties for the films as those in conventional
micrometer-sized diamonds. The complication is explained by the fact that the small size of the
diamond grains s,20 nmd may not be able to accommodate the boron species into the lattices to
effectively act as acceptor dopants. Moreover, the formation of aggregates of the nanosized diamond
grains may alter the local field enhancement factor, which further complicates the correlation of the
field-emission behavior with the boron-doping concentration for the nanodiamond films.
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語言英文
ISSN0021-8979
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