教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
學年94
學期2
出版(發表)日期2006/02/01
作品名稱Growth of high quality AlN thin films on diamond using TiN/Ti buffer layer
作品名稱(其他語言)
著者林諭男; Lin, I-nan
單位淡江大學物理學系
出版者Elsevier
著錄名稱、卷期、頁數Diamond and Related Materials 15(2-3), pp.404-409
摘要The AlN thin films were deposited on ultra-nano-crystalline diamond films (UNCD) using a buffer layer for the purpose of increasing the adhesion between the layers, enhancing the (002) texture characteristics of the films and improving the surface morphology of the AlN on UNCD films. The TiN/Ti double layer performs markedly superior on improving these characteristics of UNCD thin films to the TiN (or Ti) single layer does, which is ascribed to the additive performance of the two layers, viz. the Ti-layer improves the adhesion of the layers, whereas the TiN-layer minimizes the interaction of AlN with the underlying layer. The AlN/TiN/Ti/UNCD thin films with highly preferred-orientation (rocking curve < 4°∼5°), ultra flat and smooth surface (roughness < 15 nm ) and good piezoelectric properties (d33 ∼4.9 pm/V), which were good enough for device application, was obtained.
關鍵字MPECVD;AlN;UNCD;RF-sputtering;Buffer layer
語言英文
ISSN0925-9635
期刊性質國內
收錄於
產學合作
通訊作者
審稿制度
國別中華民國
公開徵稿
出版型式,電子版
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