教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
學年94
學期2
出版(發表)日期2006/02/01
作品名稱Improvement on the growth of ultrananocrystalline diamond by using pre-nucleation technique
作品名稱(其他語言)
著者李彥志; Lee, Yen-chih; Lin, Su-jien; Pradhan, Debabrata; 林諭男; Lin, I-nan
單位淡江大學物理學系
出版者Elsevier
著錄名稱、卷期、頁數Diamond and Related Materials 15(2-3), pp.353-356
摘要Ultrananocrystalline diamond (UNCD) films, which possess very smooth surface, were synthesized using CH4/Ar plasma. When the nucleation process was carried out under methane and hydrogen (CH4/H2) plasma with negative DC bias voltage, no pretreatment on substrate was required prior to the formation of diamond nuclei. The average grain size of BEN induced diamond nuclei is about 20∼30 nm, with the nucleation site density more than 1011 sites/cm2. The growth rate of UNCD is markedly enhanced due to the application of BEN induced nuclei. Moreover, the growth rate of UNCD films was more significantly affected by the substrate temperature, but was less influenced by the microwave power. All of these UNCD films showed similar morphology, i.e., with grain size less than 10 nm and surface roughness around 10 nm. They also possess similar Raman spectra, i.e., similar crystallinity. However, the deposition rate can be increased from ∼0.2 to 1.0 μm/h when substrate temperature increased from 400 to 600 °C.
關鍵字UNCD;High speed growth;BEN;MPECVD
語言英文
ISSN0925-9635
期刊性質國內
收錄於
產學合作
通訊作者
審稿制度
國別中華民國
公開徵稿
出版型式,電子版
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