教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films
學年97
學期2
出版(發表)日期2009/02/01
作品名稱Effect of Mo-buffer layer on the growth behavior and the electron field emission properties of UNCD films
作品名稱(其他語言)
著者Liu, Keng-Fu; Chen, Li-Ju; Tai, Nyan-Hua; Lin, I-Nan
單位淡江大學物理學系
出版者Lausanne: Elsevier S.A.
著錄名稱、卷期、頁數Diamond and Related Materials 18(2-3), pp.181-185
摘要Mo-coating on Si-substrate is observed to significantly improve the formation kinetics of diamond nuclei and the growth behavior of ultra-nanocrystalline diamond (UNCD) films. Contrary to the phenomenon that diamond nuclei are only scarcely formed on bare Si-substrates leading to incomplete coverage of UNCD grains, the diamond nuclei (and the UNCD grains) are found to cover the whole surface of Mo-coated Si-substrates. While the Mo-coating markedly enhances the nucleation of diamonds, it degrades the electron field emission (EFE) properties of UNCD films. It is attributed to the conversion of the conducting Mo-metallic film into a resistive Mo2C layer during the microwave plasma CVD process. A sufficiently thick Mo-layer is found to enhance the nucleation of diamonds, while minimizing deleterious effect on their EFE properties with an improved turn-on-field of 13 V/μm and a current density of 55 μA/cm2 at the applied field of 30 V/μm.
關鍵字Ultra-nanocrystalline diamond films; Mo-buffer layer; Nucleation behavior; Electron field emission properties
語言英文
ISSN0925-9635
期刊性質
收錄於
產學合作
通訊作者Tai, Nyan-Hua
審稿制度
國別史瓦濟蘭
公開徵稿
出版型式
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