教師資料查詢 | 類別: 期刊論文 | 教師: 林諭男 I-nan Lin (瀏覽個人網頁)

標題:Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures
學年97
學期2
出版(發表)日期2009/02/01
作品名稱Growth and electron field emission properties of ultrananocrystalline diamond on silicon nanostructures
作品名稱(其他語言)
著者Joseph, P. T.; Tai, N. H.; Cheng, Y. F.; Lee, C. Y.; Cheng, H. F.; Lin, I-Nan
單位淡江大學物理學系
出版者Lausanne: Elsevier S.A.
著錄名稱、卷期、頁數Diamond and Related Materials 18(2-3), pp.169-172
摘要The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE properties of SiNS via forming a combined UNCD/SiNS structure. The EFE properties of SiNS were improved after the deposition of UNCD at specific growth conditions. The EFE performance of SiNR (turn-on field, E0 = 5.3 V/μm and current density, Je = 0.53 mA/cm2 at an applied field of 15 V/μm) was better than SiNW bundles (turn-on field, E0 = 10.9 V/μm and current density, Je < 0.01 mA/cm2 at an applied field of 15 V/μm). The improved EFE properties with turn-on field, E0 = 4.7 V/μm, current density, Je = 1.1 mA/cm2 at an applied field of 15 V/μm was achieved for UNCD coated (UNCD grown for 60 min at 1200 W) SiNR. The EFE property of SiNW bundles was improved to a turn-on field, E0 = 8.0 V/μm, and current density, Je = 0.12 mA/cm2 at an applied field of 15 V/μm (UNCD grown for 30 min at 1200 W).
關鍵字SiNS; UNCD; Electron field emission
語言英文
ISSN0925-9635
期刊性質
收錄於
產學合作
通訊作者Cheng, H. F.
審稿制度
國別瑞士
公開徵稿
出版型式紙本
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