教師資料查詢 | 類別: 期刊論文 | 教師: 潘朝闊 PAN, CHAO-KUO (瀏覽個人網頁)

標題:Al(Ge) metallization: The effect of Ge on the solubility of Si in Al
學年74
學期1
出版(發表)日期1985/12/01
作品名稱Al(Ge) metallization: The effect of Ge on the solubility of Si in Al
作品名稱(其他語言)
著者Dale, C. J.; 潘朝闊; Pan, C. K.; Flinner, J. L.; Chu, W. K.; Finstad, T. G.
單位淡江大學物理學系
出版者College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數Journal of Applied Physics 58(11), pp.4459-4462
摘要The contact resistance between Al(Ge) alloys of various compositions and n+si has been measured using a four-terminal Kelvin probe. The samples processed for these measurements as well as similarly prepared thin films on unprocessed Si wafers have been characterized by both scanning and transmission electron microscopy after heat treatment in the temperature range 35~500 °C. The specific contact resistances for the alloys are comparable to those found for pure Al contacts to Si. However, the alloyed contacts show considerably more spiking into the Si substrate due to dissolution of Si in the metal layer. For temperatures around 350 °C, excessive spiking (compared to pure Al) is believed to be caused by increased solubility of Si in Al due to the presence of Ge. The reason for the enhanced solubility of Si in the alloy could be a counteraction of the strain in the Al lattice by Si and Ge. For anneals at 450 °C the extensive spiking could be associated with liquification of the contact metal.
關鍵字
語言英文
ISSN0021-8979
期刊性質國內
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產學合作
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審稿制度
國別美國
公開徵稿
出版型式紙本
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