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標題:Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
學年91
學期1
出版(發表)日期2002/10/28
作品名稱Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN
作品名稱(其他語言)
著者Chiou, J. W.; Mookerjee, S.; Rao, K. V. R.; Jan, J. C.; Tsai, H. M.; Asokan, K.; Pong, W. F.; Chien, F. Z.; Tsai, M. H.; Chang, Y. K.; Chen, Y. Y.; Lee, J. F.; Lee, C. C.; Chi, G. C.
單位淡江大學物理學系
出版者College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數Applied Physics Letters 81(18), pp.3389-3391
摘要As-grown and Zn-implanted wurtzite GaN samples have been studied by angle-dependent x-ray absorption near edge structure (XANES) measurements at the N and Ga K-edges and the Ga L3-edge. The angle dependence of the XANES spectra shows that the Ga–N bonds lying in the bilayer have lower energies than bonds along the c-axis, which can be attributed to the polar nature of the GaN film. The comparison of the Ga L3-edge XANES spectra of as-grown and Zn-doped GaN reveals significant dopant induced enhancement of near-edge Ga d-derived states. © 2002 American Institute of Physics.
關鍵字
語言英文
ISSN0003-6951
期刊性質國外
收錄於SCI
產學合作
通訊作者Pong, W. F.
審稿制度
國別美國
公開徵稿
出版型式紙本
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