| X-ray absorption spectroscopic investigations on oxidized Ni/Au contacts to p-GaN | |
|---|---|
| 學年 | 89 |
| 學期 | 2 |
| 出版(發表)日期 | 2001-03-01 |
| 作品名稱 | X-ray absorption spectroscopic investigations on oxidized Ni/Au contacts to p-GaN |
| 作品名稱(其他語言) | |
| 著者 | Jan, J. C.; Asokan, K.; Chiou, J. W.; Pong, Way-faung; Tesng, P. K.; Chen, F. R; Chen, J. F.; Lee, J. S.; Wu, H.; Lin, J.; Chen, C. T. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Malden: Wiley-Blackwell Publishing, Inc. |
| 著錄名稱、卷期、頁數 | Journal of synchrotron radiation 8(2), pp.827-829 |
| 摘要 | X-ray absorption spectroscopy was used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts to p-GaN and to elucidate the mechanism responsible for low impedance. X-ray absorption near edge spectra of Ni K- and L3,2-edges clearly indicate formation of NiO on the sample surface after annealing. The reason for low impedance may be attributed to increase in hole concentration and existence of p-NiO layer on the surface. |
| 關鍵字 | p-GaN; X-ray absorption; Ni/Au contacts; p-NiO |
| 語言 | en |
| ISSN | 1600-5775 0909-0495 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27642 ) |