教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
學年94
學期1
出版(發表)日期2005/10/06
作品名稱Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin films
作品名稱(其他語言)
著者Ray, S. C.; Okpalugo, T. I. T.; Pao, C. W.; Tsai, H. M.; Chiou, J. W.; Jan, J. C.; 彭維鋒; Pong, W. F.; Papakonstantinou, P.; McLaughlin, J. A.; Wang, W. J.
單位淡江大學物理學系
出版者Elsevier
著錄名稱、卷期、頁數Materials Research Bulletin 40(10), pp.1757-1764
摘要We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)4, TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Sisingle bondHn and Csingle bondHn modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition.
關鍵字A. Thin film;B. Vapour deposition;C. Infrared spectroscopy;D. Luminescence
語言英文
ISSN0025-5408
期刊性質國內
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國別中華民國
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