教師資料查詢 | 類別: 期刊論文 | 教師: 彭維鋒 Pong, Way-faung (瀏覽個人網頁)

標題:Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
學年91
學期2
出版(發表)日期2003/06/02
作品名稱Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy
作品名稱(其他語言)
著者Chiou, J.W.; Jan, J.C.; Tsai, H.M.; Pong, W.F.; Tsai, M.-H.; Hong, I.-H.; Klauser, R.; Lee, J.-F.; Hsu, C.W.; Lin, H.M.; Chen, C.-C.; Shen, C.H.; Chen, L.C.; Chen, K.H.
單位淡江大學物理學系
出版者College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數Applied Physics Letters 82(22), pp.3949-3951
摘要X-ray absorption near edge structure (XANES) and scanning photoelectron microscopy (SPEM) measurements have been employed to obtain information on the electronic structures of the GaN nanowires and thin film. The comparison of the XANES spectra revealed that the nanowires have a smaller (larger) N (Ga) K edge XANES intensity than that of the thin film, which suggests an increase (decrease) of the occupation of N 2p (Ga 4p) orbitals and an increase of the N (Ga) negative (positive) effective charge in the nanowires. The SPEM spectra showed that the Ga 3d band for the nanowires lies about 20.8 eV below the Fermi level and has a chemical shift of about -0.9 eV relative to that of the thin film.
關鍵字
語言英文
ISSN0003-6951
期刊性質國外
收錄於
產學合作
通訊作者Pong, W.F
審稿制度
國別美國
公開徵稿
出版型式紙本
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