| 標題：Observation of metal–insulator transition in Al–Pd–Re quasicrystals by x-ray absorption and photoemission spectroscopy |
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| 學年 | 91 |
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| 學期 | 2 |
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| 出版（發表）日期 | 2003/03/31 |
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| 作品名稱 | Observation of metal–insulator transition in Al–Pd–Re quasicrystals by x-ray absorption and photoemission spectroscopy |
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| 作品名稱（其他語言） | |
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| 著者 | Lay, Y. Y.; Jan, J. C.; Chiou, J. W.; Tsai, H. M.; Pong, W. F.; Tsai, M. H.; Pi, T. W.; Lee, J. F.; Ma, C. I.; Tseng, K. L.; Wang, C. R.; Lin, S. T. |
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| 單位 | 淡江大學物理學系 |
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| 出版者 | College Park: American Institute of Physics (AIP) |
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| 著錄名稱、卷期、頁數 | Applied Physics Letters 82(13), pp.2035-2037 |
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| 摘要 | Using x-ray absorption and valence-band photoelectron spectroscopy (PES) we investigated the electronic structures of icosahedral (i)-Al70Pd22.5Re7.5 quasicrystals (QCs) with a 4.2 K/300 K resistivity ratio, r, ranging from 8.3 to 107 obtained under various annealing conditions. Our Al K- and Pd L3-edge x-ray absorption results show that the density of states, N(E), near the Fermi level, EF, jumps to a larger value when r decreases down to below about 20.6. The valence-band PES results show that N(E) near EF is greatly reduced in i-Al70Pd22.5Re7.5 QCs relative to that of the pure metal, which confirms the existence of the pseudogap. The PES spectrum has a sharp cutoff at EF for r=8.3 QC, while it decreases smoothly down to zero at EF for larger r’s. The combined results suggest the occurrence of metal–insulator transition at an r between 13 and 20.6. |
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| 關鍵字 | |
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| 語言 | 英文 |
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| ISSN | 0003-6951 |
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| 期刊性質 | 國外 |
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| 收錄於 | |
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| 產學合作 | |
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| 通訊作者 | |
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| 審稿制度 | |
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| 國別 | 美國 |
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| 公開徵稿 | |
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| 出版型式 | 紙本 |
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