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標題:Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy
學年96
學期2
出版(發表)日期2008/07/01
作品名稱Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy
作品名稱(其他語言)
著者Chioiu, J. W.; Tsai, H. M; Pao, C. W.; Chien, F. Z.; Pong, W. F.; Chen, C. W.; Tsai, M.-H.; Wu, J. J.; Ko, C. H.; Chiang, H. H.; Lin, H.-J.; Lee, J. F.; Guo, J.-H.
單位淡江大學物理學系
出版者College Park: American Institute of Physics (AIP)
著錄名稱、卷期、頁數Journal of Applied Physics 104(1), pp.013709(4 pages)
摘要X-rayabsorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mgdoping in ZnOnanorods. The intensities of the features in the O K-edge XANES spectra of Zn1−xMgxOnanorods are lower than those of pure ZnOnanorods, suggesting that Mgdoping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mgdoping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.
關鍵字conduction bands; energy gap; II-VI semiconductors; nanostructured materials; photoluminescence; semiconductor doping; spectral line intensity; valence bands; wide band gap semiconductors; XANES; X-ray emission spectra; zinc compounds
語言英文
ISSN0021-8979;1089-7550
期刊性質
收錄於
產學合作
通訊作者Chioiu, J. W.
審稿制度
國別美國
公開徵稿
出版型式紙本;電子版
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