關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films

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序號 學年期 教師動態
1 97/2 物理系 彭維鋒 教授 期刊論文 發佈 Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films , [97-2] :Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films期刊論文Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond FilmsPalathinkal, Thomas Joseph; Tai, Nyan-Hwa; Lee, Chi-Young; Niu, Huan; Cheng, Hsiu-Fung; Pong, Way-Faung; Lin, I-Nan淡江大學物理學系electron field emission;films;ion implantation;UNCD;X-ray photoelectron spectroscopyWeinheim: Wiley - V C H Verlag GmbH & Co. KGaAPlasma Processes and Polymers 6(1), pp.S834–S839The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (1012 ions/cm2) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (1015 ions/cm2) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B io
2 97/2 物理系 林諭男 教授 期刊論文 發佈 Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films , [97-2] :Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond Films期刊論文Field Emission Enhancement in Ion Implanted Ultra-nanocrystalline Diamond FilmsPalathinkal, Thomas Joseph; Tai, Nyan-Hwa; Lee, Chi-Young; Niu, Huan; Cheng, Hsiu-Fung; Pong, Way-Faung; Lin, I-Nan淡江大學物理學系electron field emission;films;ion implantation;UNCD;X-ray photoelectron spectroscopyWeinheim: Wiley - V C H Verlag GmbH & Co. KGaAPlasma Processes and Polymers 6(1), pp.S834–S839The effects of B and N ion implantation on structural and electron field emission (EFE) properties of ultra-nanocrystalline diamond (UNCD) films are reported. Low-dose (1012 ions/cm2) B ion implantation & annealing processes insignificantly changed the EFE properties, high-dose (1015 ions/cm2) ion implantation & annealing processes resulted in surface graphitization for UNCD films. While the field emission property of UNCD films was greatly improved due to the N ion implantation & annealing processes, they were degraded due to B io
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