關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy

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1 96/2 物理系 張經霖 教授 期刊論文 發佈 Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy , [96-2] :Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy期刊論文Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopyDong, C. L.; Asokan, K.; Chen, Y. Y.; Chen, C. L.; Chen, J. L.; Liu, Y. S.; Chang, C. L.; Lee, J. F.; Guo, J. H.淡江大學物理學系Cerium compounds;Charge transfer;Electronic structure;Film thickness;Valence bands;X ray absorption spectroscopy;Hybridization;K-edge threshold;Mixed valence;Occupancy;Thin filmsAmsterdam: Elsevier BV * North-HollandPhysica B: Condensed Matter 403(5-9), pp.854-855We present a x-ray absorption near-edge structure study (XANES) at Ce L3-, and Co K-edges of CeCo2 thin films with the thickness varying from 30nm to 140nm. The Ce L3-edge measurements exhibit the mixed valence nature and tetravalent contribution that increases with the thickness of CeCo2. The variation in the spectral intensity observed at Co K-edge threshold indicates that there is a change in 3d occupancy and also in 3d-4f-5d hybridization. Th
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