關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Electrically programmable magnetoresistance in AlOx‑based magnetic tunnel junctions

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序號 學年期 教師動態
1 109/2 物理系 林大欽 教授 期刊論文 發佈 Electrically programmable magnetoresistance in AlOx‑based magnetic tunnel junctions , [109-2] :Electrically programmable magnetoresistance in AlOx‑based magnetic tunnel junctions期刊論文Electrically programmable magnetoresistance in AlOx‑based magnetic tunnel junctionsJhen‑Yong Hong; Chen‑Feng Hung; Kui‑Hon Ou Yang; Kuan‑Chia Chiu; Dah‑Chin Ling; Wen‑Chung Chiang; Minn‑Tsong LinMagnetic properties and materials;SpintronicsScientific Reports 11, 6027 (7 pages)We report spin-dependent transport properties and I–V hysteresis characteristics in an AlOx-based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the AlOx layer. The role played by oxygen vacancies in AlOx is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states
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