關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Effect of boron doping on the electron-field-emission properties of nanodiamond films

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1 93/2 物理系 林諭男 教授 期刊論文 發佈 Effect of boron doping on the electron-field-emission properties of nanodiamond films , [93-2] :Effect of boron doping on the electron-field-emission properties of nanodiamond films期刊論文Effect of boron doping on the electron-field-emission properties of nanodiamond films李彥志; Lee, Yen-chih; Lin, Su-jien; 林諭男; Lin, I-nan; Cheng, Hsiu-fung淡江大學物理學系American Institute of Physics (AIP)Journal of Applied Physics 97(5), pp.054310The electron-field-emission sEFEd behavior of the nanodiamond films was observed to be pronouncedly superior to that of the diamond films with micrometer- or submicrometer-sized grains, which is ascribed to the presence of abundant grains boundaries with sp2 bonds. Incorporation of boron species into the nanodiamond films further improves the EFE properties for the films. The best EFE properties achieved are turn-on field E0=18 V/mm with EFE capacity J=0.7 mA/cm2 at around 30 V/mm applied field. However, boron doping into the nanodiamond films does not result in consistent boron-content dependence of the EFE properties for the films as those in conventional
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