關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films

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1 92/1 物理系 林諭男 教授 期刊論文 發佈 Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films , [92-1] :Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films期刊論文Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films林諭男; Lin, I-nan; Chou, Yi-Ping; Chen, Tong T.淡江大學物理學系Co-doped Diamond Films;Electron Field Emission Properties;Current Image Tunneling Spectroscopy臺北縣:淡江大學淡江理工學刊=Tamkang journal of science and engineering 6(3),頁139-144Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (Eg = 1.62 eV) and largest emission ratio, as compared with
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