關鍵字查詢 | 類別:期刊論文 | | 關鍵字:Compression Mechanisms in Highly Anisotropic Semiconductors

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1 87/1 物理系 薛宏中 教授 期刊論文 發佈 Compression Mechanisms in Highly Anisotropic Semiconductors , [87-1] :Compression Mechanisms in Highly Anisotropic Semiconductors期刊論文Compression Mechanisms in Highly Anisotropic Semiconductors薛宏中; Hsueh, H. C.; Crain, J.淡江大學物理學系Wiley-BlackwellPhysica Status Solidi. B, Basic research 211(1), pp.365-372We examine in detail the effect of hydrostatic compression on anisotropic semiconductors which, at ambient conditions, are characterised by the coexistence of both weak and strong cohesive forces. We focus on elucidating the response to compression of the structural, vibrational and electronic properties in quasi-two-dimensional layered materials and quasi-molecular solids. Results for layered IV–VI semiconductors (GeS and GeSe) and members of the quasi-molecular Group-V metal triiodides AsI3 are reported. Our methodology combines X-ray powder diffraction, Raman spectroscopy and ab initio electronic structure simulations. We demonstrate that compression in this class of material leads to complex compression mechanisms favouring more isotropically bonded phas
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