期刊論文

學年 113
學期 2
出版（發表）日期 2025-07-01
作品名稱 Stochastic Nature of Voltage-Controlled Charge Dynamics in AlOx Magnetic Tunnel Junctions
作品名稱（其他語言）
著者 Chun-Yen Chen; Bao-Huei Huang; Yu-Hui Tang; César, Gonzalez-Ruano; Farkhad G. Aliev; Dah-Chin Ling; Jhen-Yong Hong
單位
出版者
著錄名稱、卷期、頁數 Nano Lett. 25(31), p. 11776-11781
摘要 Spintronic memristors based on ferromagnetic metal/oxide heterostructures have recently enabled reversible manipulation of both magnetic properties and resistive switching (RS), offering promising prospects for multibit memory and neuromorphic computing. In this study, we investigate the stochastic nature and relaxation processes of charge dynamics induced by localized oxygen vacancy (VO) in AlOx-based magnetic tunnel junctions (MTJs). We observe that random telegraph noise (RTN) exhibits charge stochasticity at specific bias voltages in the low resistance state (LRS), reflecting the competition and transition between charge capture and emission states against the thermal energy. This behavior reveals that the thermally unstable charge stochasticity originates from localized traps in the AlOx barrier. In contrast, the high resistance state (HRS) favors the RTN emission states, indicating the dominance of direct tunneling effects. Through numerical calculations based on the tight-binding (TB) model and experimental results, we demonstrate that voltage-driven shifts in the VO position within the AlOx barrier, associated with RS, govern the charge dynamics of the MTJs investigated. These findings provide valuable insights and practical implications for the development of next-generation devices leveraging charge stochasticity in AlOx-based MTJs.
關鍵字 magnetic tunnel junction; memristor; resistive switching; random telegraph noise; oxygen vacancy
語言 en_US
ISSN
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度 否
國別 USA
公開徵稿
出版型式 ,電子版
相關連結

機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/128545 )