期刊論文
| 學年 | 113 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2025-03-26 |
| 作品名稱 | Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides |
| 作品名稱（其他語言） | |
| 著者 | Yi-Hsun Chen; Ping-Yuan Lo; Kyle W. Boschen; Chih-En Hsu; Yung-Ning Hsu; Luke N. Holtzman; Guan-Hao Peng; Chun-Jui Huang; Madisen Holbrook; Wei-Hua Wang; Katayun Barmak; James Hone; Pawel Hawrylak; Hung-Chung Hsueh; Jeffrey A. Davis; Shun-Jen Cheng; Michael S. Fuhrer; Shao-Yu Chen |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Nature Communications 16, p.2935 |
| 摘要 | Materials capable of light upconversion—transforming low-energy photons into higher-energy ones—are pivotal in advancing optoelectronics, energy solutions, and photocatalysis. However, the discovery in various materials pays little attention on few-layer transition metal dichalcogenides, primarily due to their indirect bandgaps and weaker light-matter interactions. Here, we report a pronounced light upconversion in few-layer transition metal dichalcogenides through upconversion photoluminescence spectroscopy. Our joint theory-experiment study attributes the upconversion photoluminescence to a resonant exciton-exciton annihilation involving a pair of dark excitons with opposite momenta, followed by the spontaneous emission of upconverted bright excitons, which can have a high upconversion efficiency. Additionally, the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and WSe2, showing a high tuneability from green to ultraviolet light (2.34–3.1 eV). The findings pave the way for further exploration of light upconversion regarding fundamental properties and device applications in two-dimensional semiconductors. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 2041-1723 |
| 期刊性質 | 國外 |
| 收錄於 | SCI Scopus |
| 產學合作 | 國內 |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | ,電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/127914 ) |