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學年
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113 |
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學期
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2 |
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出版（發表）日期
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2025-03-26 |
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作品名稱
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Efficient light upconversion via resonant exciton-exciton annihilation of dark excitons in few-layer transition metal dichalcogenides |
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作品名稱（其他語言）
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著者
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Yi-Hsun Chen, Ping-Yuan Lo, Kyle W. Boschen, Chih-En Hsu, Yung-Ning Hsu, Luke N. Holtzman, Guan-Hao Peng, Chun-Jui Huang, Madisen Holbrook, Wei-Hua Wang, Katayun Barmak, James Hone, Pawel Hawrylak, Hung-Chung Hsueh(薛宏中), Jeffrey A. Davis, Shun-Jen Cheng*, Michael S. Fuhrer, & Shao-Yu Chen* |
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單位
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出版者
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著錄名稱、卷期、頁數
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Nature Communications, vol. 16, p.2935 |
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摘要
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Materials capable of light upconversion—transforming low-energy photons
into higher-energy ones—are pivotal in advancing optoelectronics, energy
solutions, and photocatalysis. However, the discovery in various materials
pays little attention on few-layer transition metal dichalcogenides, primarily
due to their indirect bandgaps and weaker light-matter interactions. Here, we
report a pronounced light upconversion in few-layer transition metal dichalcogenides through upconversion photoluminescence spectroscopy. Our joint
theory-experiment study attributes the upconversion photoluminescence to a
resonant exciton-exciton annihilation involving a pair of dark excitons with
opposite momenta, followed by the spontaneous emission of upconverted
bright excitons, which can have a high upconversion efficiency. Additionally,
the upconversion photoluminescence is generic in MoS2, MoSe2, WS2, and
WSe2, showing a high tuneability from green to ultraviolet light (2.34–3.1 eV).
The findings pave the way for further exploration of light upconversion
regarding fundamental properties and device applications in two-dimensional
semiconductors. |
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關鍵字
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語言
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en |
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ISSN
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期刊性質
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國內 |
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收錄於
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SCI
ESCI
Scopus
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產學合作
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國內
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通訊作者
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Shun-Jen Cheng* & Shao-Yu Chen* |
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審稿制度
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否 |
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國別
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GBR |
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公開徵稿
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出版型式
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,電子版 |