期刊論文
| 學年 | 113 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2024-08-19 |
| 作品名稱 | A novel method for the synthesis of MoSSe using an [Et4N]2[Mo3S4Se3Br6] complex as the sole precursor |
| 作品名稱（其他語言） | |
| 著者 | Dang B. Tran; Ly T. Le; Duc N. Nguyen; Quyen T. Nguyen; Ta Thi Thuy Nga; Wu-Ching Chou; Hoang H. Luc; Chung-Li Dong; Phong D. Tran |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Dalton Transactions 53(37), p.15638-15647 |
| 摘要 | MoSSe is a semiconducting material with a layered structure similar to MoS2 and MoSe2, which shows potential applications in optoelectronics, solar cells, sensing, and catalysis. Synthesis of this material with a controllable structure and chemical composition represents a great challenge. Herein, we report a new method for the synthesis of MoSSe by employing an [Et4N]2[Mo3S4Se3Br6] complex as the sole precursor. Thermal annealing of this complex under an Ar atmosphere at moderate temperatures ranging from 350 °C to 650 °C resulted in the formation of pure MoSSe. The morphology and structure of MoSSe were characterized using SEM, HRTEM, XRD, Raman spectroscopy, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The effects of annealing temperature on the structure of MoSSe were also examined. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 1477-9226; 1477-9234 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/127610 ) |