期刊論文
| 學年 | 110 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2021-10-16 |
| 作品名稱 | Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses |
| 作品名稱（其他語言） | |
| 著者 | Jhen-Yong Hong; Chun-Yen Chen; Dah-Chin Ling; Isidoro Martínez; César González-Ruano; Farkhad G. Aliev |
| 單位 | |
| 出版者 | |
| 著錄名稱、卷期、頁數 | Electronics 10(20), p.2525 |
| 摘要 | Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter α and the exponent γ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices. |
| 關鍵字 | low-frequency 1/f noise;resistive switching;magnetic tunnel junction (MTJ);magneto-resistance (MR);Hooge’s parameter |
| 語言 | en |
| ISSN | 1654-8809 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | SWE |
| 公開徵稿 | |
| 出版型式 | ,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/123351 ) |