期刊論文
學年 | 104 |
---|---|
學期 | 1 |
出版(發表)日期 | 2015-10-12 |
作品名稱 | An integrated cobalt disulfide (CoS2) co-catalyst passivation layer on silicon microwires for photoelectrochemical hydrogen evolution |
作品名稱(其他語言) | |
著者 | Chih-Jung Chen; Po-Tzu Chen; Mrinmoyee Basu; Kai-Chih Yang; Ying-Rui Lu; Chung-Li Dong; Chong-Geng Ma; Chin-Chang Shen; Shu-Fen Hu; Ru-Shi Liu |
單位 | |
出版者 | |
著錄名稱、卷期、頁數 | Journal of Materials Chemistry A 2015(46), p.23466-23476 |
摘要 | An integrated cobalt disulfide (CoS2) co-catalyst passivation layer on Si microwires (MWs) was used as a photocathode for solar hydrogen evolution. Si MWs were prepared by photolithography and dry etching techniques. The CoS2–Si photocathodes were subsequently prepared by chemical deposition and thermal sulfidation of the Co(OH)2 outer shell. The optimized onset potential and photocurrent of the CoS2–Si electrode were 0.248 V and −3.22 mA cm−2 (at 0 V), respectively. The best photocatalytic activity of the CoS2–Si electrode resulted from lower charge transfer resistances among the photoabsorber, co-catalyst, and redox couples in the electrolyte. X-ray absorption near edge structure was conducted to investigate the unoccupied electronic states of the CoS2 layer. We propose that more vacancies in the S-3p unoccupied states of the CoS2–Si electrode were present with a lower negative charge of S22− to form weaker S–H bond strength, promoting water splitting efficiency. Moreover, the CoS2 co-catalyst that completely covered underlying Si MWs served as a passivation layer to prevent oxidation and reduce degradation during photoelectrochemical measurements. Therefore, the optimal CoS2–Si electrode maintained the photocurrent at about −3 mA cm−2 (at 0 V) for 9 h, and its hydrogen generation rate was approximately 0.833 μmol min−1. |
關鍵字 | |
語言 | en |
ISSN | 2050-7488 |
期刊性質 | 國外 |
收錄於 | SCI |
產學合作 | |
通訊作者 | Shu-Fen Hu; Ru-Shi Liu |
審稿制度 | 是 |
國別 | GBR |
公開徵稿 | |
出版型式 | ,電子版,紙本 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/108292 ) |