期刊論文
| 學年 | 101 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2012-11-15 |
| 作品名稱 | Using an Au interlayer to enhance electron field emission properties of ultrananocrystalline diamond films |
| 作品名稱（其他語言） | |
| 著者 | Chen, H. C.; K. J. Sankaran; Lo, S.C.; Lin, L.J.; Tai, N.H.; Lee, C. Y.; Lin, I.N. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 112(10), 103711(10pages) |
| 摘要 | We observe that an Au interlayer markedly enhances the electrical field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films on Si substrates. The EFE properties of UNCD/Au/Si films can be turned on at a lower field and attain a higher current density than in UNCD films grown on Si substrates without an Au interlayer. Transmission electron microscopy reveals that the Au interlayer induces the formation of SiC clusters, preventing the formation of a resistive amorphous carbon layer that nucleates the diamond clusters. This improves the diamond-to-substrate interfacial conductivity. Moreover, there is an abundant nano-graphite phase, which is presumably induced by the coalescence of nano-sized diamond clusters. The percolation of the nano-graphite clusters helps transport electrons, improving the conductivity of the UNCD films. We believe that the simultaneous increase in the conductivity of the UNCD-to-Si interface and the bulk of the UNCD films is the main factor enhancing electrical conductivity and EFE properties of the films. |
| 關鍵字 | diamond;electrical conductivity;electron field emission;elemental semiconductors;gold;nanostructured materials;percolation;transmission electron microscopy;wide band gap semiconductors |
| 語言 | en |
| ISSN | 0021-8979 |
| 期刊性質 | 國外 |
| 收錄於 | SCI |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 是 |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/100068 ) |