期刊論文
學年 | 101 |
---|---|
學期 | 2 |
出版(發表)日期 | 2013-02-01 |
作品名稱 | Direct observation of enhanced emission sites in nitrogen implanted hybrid structured ultrananocrystalline diamond films |
作品名稱(其他語言) | |
著者 | Kalpataru Panda; Chen, Huang-Chin; Sundaravel B.; Panigrahi, B. K.; Lin, I-Nan |
單位 | 淡江大學物理學系 |
出版者 | College Park: American Institute of Physics |
著錄名稱、卷期、頁數 | Journal of Applied Physics 113(5), 054311(8pages) |
摘要 | A hybrid-structured ultrananocrystalline diamond (h-UNCD) film, synthesized on Si-substrates by a two-step microwave plasma enhanced chemical vapour deposition (MPECVD) process, contains duplex structure with large diamond aggregates evenly dispersed in a matrix of ultra-small grains (∼5 nm). The two-step plasma synthesized h-UNCD films exhibit superior electron field emission (EFE) properties than the one-step MPECVD deposited UNCD films. Nitrogen-ion implantation/post-annealing processes further improve the EFE properties of these films. Current imaging tunnelling spectroscopy in scanning tunnelling spectroscopy mode directly shows increased density of emission sites in N implanted/post-annealed h-UNCD films than as-prepared one. X-ray photoelectron spectroscopy measurements show increased sp2 phase content and C–N bonding fraction in N ion implanted/post-annealed films. Transmission electron microscopic analysis reveals that the N implantation/post-annealing processes induce the formation of defects in the diamond grains, which decreases the band gap and increases the density of states within the band gap of diamond. Moreover, the formation of nanographitic phase surrounding the small diamond grains enhanced the conductivity at the diamond grain boundaries. Both of the phenomena enhance the EFE properties. |
關鍵字 | Diamond; Elemental semiconductors; Thin film structure; Grain boundaries; Thin films |
語言 | |
ISSN | 0021-8979 1089-7550 |
期刊性質 | 國外 |
收錄於 | |
產學合作 | |
通訊作者 | |
審稿制度 | |
國別 | USA |
公開徵稿 | |
出版型式 | 紙本 電子版 |
相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97208 ) |