期刊論文
| 學年 | 101 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2013-02-01 |
| 作品名稱 | STM observation of surface transfer doping mechanism in 3 keV nitrogen ion implanted UNCD films |
| 作品名稱（其他語言） | |
| 著者 | Sundaravel, B.; Panda, Kalpataru; Dhandapani R.; Panigrahi, B. K.; Nair, K. G. M.; Lin, I-Nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | AIP Conference Proceedings 1512(1), pp.384-385 |
| 摘要 | 3 keV nitrogen ions are implanted into UNCD/Si from our 30 kV ion accelerator. Field emission property is enhanced upon nitrogen implantation in comparision to as-prepared UNCD. STM shows that there is agglomeration of diamond grains. CITS measurements show that diamond grains are the prominent electron emitters while grain boundaries were the prominent emitters for 75 keV N+ implantation. When N atoms are at the surface, electron emission by transfer-doping process appears to be the physical mechanism involved. When they are buried deeper as in the case of 75 keV ions, grain boundary conduction-channel process is valid. |
| 關鍵字 | Diamond; Nanocrystalline materials; Grain boundaries; Ion implantation; Scanning tunneling microscopy |
| 語言 | |
| ISSN | 0094-243X 1551-7616 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Lin, I-Nan |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97205 ) |