期刊論文
| 學年 | 101 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2013-05-01 |
| 作品名稱 | Strong photoluminescence from N-V and Si-V in nitrogen-doped ultrananocrystalline diamond film using plasma treatment |
| 作品名稱（其他語言） | |
| 著者 | Ko, Tin-Yu; Liu, Yu-Lin; Sun, Kien-Wen; Lin, Yi-Jie; Fong, Shih-Chieh; Lin, I-Nan; Tai, Nyan-Hwa |
| 單位 | 淡江大學物理學系 |
| 出版者 | Lausanne: Elsevier S.A. |
| 著錄名稱、卷期、頁數 | Diamond and Related Materials 35, pp.36-39 |
| 摘要 | Raman, photoluminescence, and transport properties of nitrogen-doped ultrananocrystal diamond (UNCD) films were investigated following treatment with low energy microwave plasma at room temperature. The conductivity of nitrogen-doped UNCD films treated by microwave plasma was found to decrease slightly due to the reduced grain boundaries. We speculate that the plasma generated vacancies in UNCD films and provided heat for further mobilizing the vacancies to combine with the impurities, which led to the formation of the silicon-vacancy (Si-V) and nitrogen-vacancy (N-V) defect centers. The generated color centers were found to be distributed uniformly in the samples using a PL mapping technique. The PL emitted by the plasma treated nitrogen-doped UNCD film was strongly enhanced in comparison with the untreated films. |
| 關鍵字 | Ultrananocrystalline diamond; Nitrogen vacancy; Plasma; Photoluminescence; Color center |
| 語言 | |
| ISSN | 0925-9635 |
| 期刊性質 | 國外 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Sun, Kien-Wen |
| 審稿制度 | |
| 國別 | CHE |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/97203 ) |