會議論文
| 學年 | 89 |
|---|---|
| 學期 | 1 |
| 發表日期 | 2000-11-01 |
| 作品名稱 | The Surface Morphology and Sub-surface Characteristics of ELID-Ground Single Crystal Silicon |
| 作品名稱（其他語言） | |
| 著者 | Chao, C. L.; Ma, K. J.; Liu, D. S.; Sheu, C. C.; Sheu, S. C.; Lin, Y. S.; Lin, H. Y.; Chang, F. Y. |
| 作品所屬單位 | 淡江大學機械與機電工程學系 |
| 出版者 | |
| 會議名稱 | 第四屆奈米工程暨微系統技術研討會 |
| 會議地點 | 新竹縣, 臺灣 |
| 摘要 | In order to machine the 300mm-400mm silicon wafer to the specifiedsurface roughness and flatness, ELID diamond grinding were employed inthis study to investigate its feasibility. Cast iron fiber reinforceddiamond wheels were used to grind silicon wafers and various ELIDparameters were systematically tested to examine their influences onthe grinding process. The results showed that, under the same grindingconditions, the obtained surfaces were characterized by (1) thickpoly/amorphous layer with occasionally deep-penetrated cracks, (2)thick amorphous layer (up to 250nm) with distributed dislocation loops(-300nm into the substrate), and (3) thin amorphous layer (up to 30nm)when (1) no ELID, (2) ELID with rather low peak voltage and currentand (3) ELID with high peak voltage and current were applied in thegrinding processes. |
| 關鍵字 | 單晶矽;電解製程中修銳技術;研磨;表面形態;矽晶圓;Single Crystal Silicon;Electrolytic Inprocess Dressing;Grinding;Surface Morphology;Silicon Wafer |
| 語言 | en |
| 收錄於 | |
| 會議性質 | 國內 |
| 校內研討會地點 | |
| 研討會時間 | 20001101~20001102 |
| 通訊作者 | |
| 國別 | TWN |
| 公開徵稿 | Y |
| 出版型式 | 紙本 |
| 出處 | 第四屆奈米工程暨微系統技術研討會論文集，頁2-61-2-66 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/96424 ) |