期刊論文

學年 96
學期 2
出版(發表)日期 2008-04-01
作品名稱 Electronic structure of CeCo2 thin films studied by X-ray absorption spectroscopy
作品名稱(其他語言)
著者 Dong, C. L.; Asokan, K.; Chen, Y. Y.; Chen, C. L.; Chen, J. L.; Liu, Y. S.; Chang, C. L.; Lee, J. F.; Guo, J. H.
單位 淡江大學物理學系
出版者 Amsterdam: Elsevier BV * North-Holland
著錄名稱、卷期、頁數 Physica B: Condensed Matter 403(5-9), pp.854-855
摘要 We present a x-ray absorption near-edge structure study (XANES) at Ce L3-, and Co K-edges of CeCo2 thin films with the thickness varying from 30nm to 140nm. The Ce L3-edge measurements exhibit the mixed valence nature and tetravalent contribution that increases with the thickness of CeCo2. The variation in the spectral intensity observed at Co K-edge threshold indicates that there is a change in 3d occupancy and also in 3d-4f-5d hybridization. This study shows the effect of surface to bulk ratio and how it influences the charge transfer between Ce and Co ions and hence the electronic structure of CeCo2 thin films.
關鍵字 Cerium compounds;Charge transfer;Electronic structure;Film thickness;Valence bands;X ray absorption spectroscopy;Hybridization;K-edge threshold;Mixed valence;Occupancy;Thin films
語言 en
ISSN 0921-4526
期刊性質 國外
收錄於 SCI
產學合作
通訊作者
審稿制度
國別 NLD
公開徵稿
出版型式 紙本
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