期刊論文

學年 100
學期 2
出版(發表)日期 2012-06-01
作品名稱 N-ion implantation of micro-nanocrystalline duplex structured diamond films for enhancing their electron field emission properties
作品名稱(其他語言)
著者 Panda, Kalpataru; Sundaravel, Balakrishanan; Cheng, Hsiu-fung; Horng, Chuang-chi; Chang, Horng-yi; Chen, Huang-chin; Lin, I-nan
單位 淡江大學物理學系
出版者 Elsevier
著錄名稱、卷期、頁數 Surface and Coatings Technology 228, PP.S331-S335
摘要 The improvement on the electron field emission (EFE) properties of duplex-structured diamond films by N-ion implantation/post-annealing processes was investigated. The duplex-structured diamond films were synthesized by a two-step microwave plasma enhanced CVD process. Transmission electron microscopy (TEM) examinations reveal that all the as-prepared, N-ion implanted and post-annealed diamond films contained large microcrystalline-diamond (MCD) aggregates sparsely distributed among the matrix of ultra-small diamond grains. While the granular structure of the MCD aggregates was insignificantly modified due to the N-ion implantation/post-annealing processes, that of the UNCD regions was markedly altered. The EFE process for the MCD/UNCD films can be turned on at (E0)MCD/UNCD = 8.21 V/μm, which is even smaller than the E0-field for the UNCD films ((E0)UNCD = 13.34 V/μm). These N-ion implanted/post-annealed diamond films attained an EFE current density of (Je)MCD/UNCD = 0.4 mA/cm2 at an applied field of 20.0 V/μm that is even larger than the Je-value for the UNCD films ((Je)UNCD < 0.05 mA/cm2 at the same applied field). Presumably, the enhanced EFE properties are resulted from the presence of nano-graphites in the small-grain region of MCD/UNCD films that form an interconnected path, facilitating the transport of electrons.
關鍵字 Composite diamond films; Electron field emission properties; Transmission electron microscopy
語言 en
ISSN 0257-8972
期刊性質 國外
收錄於
產學合作
通訊作者 Lin, I-nan
審稿制度
國別 CHE
公開徵稿
出版型式 紙本 電子版
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