期刊論文
| 學年 | 97 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2009-06-01 |
| 作品名稱 | Field emission enhancement in ultrananocrystalline diamond films by in situ heating during single or multienergy ion implantation processes |
| 作品名稱（其他語言） | |
| 著者 | Joseph, P.T.; Tai, N.H.; Chen, C.H.; Niu, H.; Cheng, H.F.; Palnitkar, U.A.; Lin, I.N. |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 105(12), 123710(7pages) |
| 摘要 | The single or multienergy nitrogen (N) ion implantation (MENII) processes with a dose (4×1014 ions/cm2) just below the critical dose (1×1015 ions/cm2) for the structural transformation of ultrananocrystalline diamond (UNCD) films were observed to significantly improve the electron field emission (EFE) properties. The single energy N ion implantation at 300 °C has shown better field emission properties with turn-on field (E0) of 7.1 V/μm, as compared to room temperature implanted sample at similar conditions (E0 = 8.0 V/μm) or the pristine UNCD film (E0 = 13.9 V/μm). On the other hand, the MENII with a specific sequence of implantation pronouncedly showed different effect on altering the EFE properties for UNCD films, and the implantation at 300 °C further enhanced the EFE behavior. The best EFE characteristics achieved for the UNCD film treated with the implantation process are E0 = 4.5 V/μm and current density of (Je) = 2.0 mA/cm2 (at 24.5 V/μm). The prime factors for improving the EFE properties are presumed to be the grain boundary incorporation and activation of the implanted N and the healing of induced defects, which are explained based on surface charge transfer doping mechanism. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0021-8979; 1089-7550 |
| 期刊性質 | 國外 |
| 收錄於 | SCI EI |
| 產學合作 | |
| 通訊作者 | Tai, N.H.; Lin, I.N. |
| 審稿制度 | |
| 國別 | USA |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/77249 ) |