期刊論文
| 學年 | 97 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2009-05-01 |
| 作品名稱 | On the mechanism of enhancement on electron field emission properties for ultrananocrystalline diamond films due to ion implantation |
| 作品名稱（其他語言） | |
| 著者 | Joseph, P.T.; Tai, N.H.; Chen, C.H.; Niu, H.; Cheng, H.F; Pong, W.F.; Lin, I.N. |
| 單位 | 淡江大學物理學系 |
| 出版者 | Bristol: Institute of Physics Publishing Ltd. |
| 著錄名稱、卷期、頁數 | Journal of Physics D: Applied Physics 42(10), 105403(6pages) |
| 摘要 | The effects of N and C ion implantations on modifying the structural and field emission properties of ultrananocrystalline diamond (UNCD) films were investigated. Low dose ion implantations possibly introduced point defects, which were easily removed by the annealing process. The nature of the doping species, N or C, was immaterial. In contrast, high dose N ion implantation induced the formation of the amorphous phase, which was converted into the graphitic phase after annealing, and improved the field emission properties (Je was increased to ~6.3 mA cm−2 at 20 V µm−1). However, the high dose C ion implantation induced the graphitic phase directly, which degraded the field emission characteristics, i.e. Je was lowered to ~0.6 mA cm−2 at 20 V µm−1. The variations in the electron field emission properties for ion-implanted UNCD films are accounted for by the nature of the induced defects and the electron transfer doping mechanism. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0022-3727; 1361-6463 |
| 期刊性質 | 國外 |
| 收錄於 | SCI EI |
| 產學合作 | |
| 通訊作者 | Lin, I.N. |
| 審稿制度 | 是 |
| 國別 | GBR |
| 公開徵稿 | |
| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/72684 ) |