期刊論文
| 學年 | 92 |
|---|---|
| 學期 | 1 |
| 出版（發表）日期 | 2003-09-01 |
| 作品名稱 | Current Image Tunneling Spectroscopy of Boron and Nitrogen Co-doped Diamond Films |
| 作品名稱（其他語言） | |
| 著者 | 林諭男; Lin, I-nan; Chou, Yi-Ping; Chen, Tong T. |
| 單位 | 淡江大學物理學系 |
| 出版者 | 臺北縣：淡江大學 |
| 著錄名稱、卷期、頁數 | 淡江理工學刊=Tamkang journal of science and engineering 6(3)，頁139-144 |
| 摘要 | Effect of boron and nitrogen co-doping on the electron field emission properties of the diamond films was examined using current image tunneling spectroscopy in atomic force microscopy (CITS, AFM). Tunneling current-voltage (It-V) characteristics measured by AFM indicate that incorporation of boron and nitrogen species induced the presence of impurity state. Such a characteristic is closely related to the local electron field emission behavior of the diamond films. The samples co-doped with 4 sccm boron and 3 sccm nitrogen possess smallest energy gap (Eg = 1.62 eV) and largest emission ratio, as compared with that of other diamond films. These diamond films can be turned on at smallest electric field (Eo = 6.4 V/μm), exhibiting largest field emission capacity (Je = 1,500 μA/cm2). |
| 關鍵字 | Co-doped Diamond Films;Electron Field Emission Properties;Current Image Tunneling Spectroscopy |
| 語言 | en_US |
| ISSN | 1560-6686 |
| 期刊性質 | 國內 |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | |
| 審稿制度 | 否 |
| 國別 | TWN |
| 公開徵稿 | |
| 出版型式 | ,電子版,紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/52732 ) |