期刊論文
| 學年 | 93 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2005-03-01 |
| 作品名稱 | Effect of boron doping on the electron-field-emission properties of nanodiamond films |
| 作品名稱（其他語言） | |
| 著者 | 李彥志; Lee, Yen-chih; Lin, Su-jien; 林諭男; Lin, I-nan; Cheng, Hsiu-fung |
| 單位 | 淡江大學物理學系 |
| 出版者 | American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 97(5), pp.054310 |
| 摘要 | The electron-field-emission sEFEd behavior of the nanodiamond films was observed to be pronouncedly superior to that of the diamond films with micrometer- or submicrometer-sized grains, which is ascribed to the presence of abundant grains boundaries with sp2 bonds. Incorporation of boron species into the nanodiamond films further improves the EFE properties for the films. The best EFE properties achieved are turn-on field E0=18 V/mm with EFE capacity J=0.7 mA/cm2 at around 30 V/mm applied field. However, boron doping into the nanodiamond films does not result in consistent boron-content dependence of the EFE properties for the films as those in conventional micrometer-sized diamonds. The complication is explained by the fact that the small size of the diamond grains s,20 nmd may not be able to accommodate the boron species into the lattices to effectively act as acceptor dopants. Moreover, the formation of aggregates of the nanosized diamond grains may alter the local field enhancement factor, which further complicates the correlation of the field-emission behavior with the boron-doping concentration for the nanodiamond films. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0021-8979 |
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| 出版型式 | 紙本 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/27554 ) |