期刊論文
| 學年 | 96 |
|---|---|
| 學期 | 2 |
| 出版（發表）日期 | 2008-02-15 |
| 作品名稱 | Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films |
| 作品名稱（其他語言） | |
| 著者 | Joseph, P. T.; Tai, N. H.; Lee, C. Y.; Niu, H.; Pong, W. F.; Lin, I-nan |
| 單位 | 淡江大學物理學系 |
| 出版者 | College Park: American Institute of Physics (AIP) |
| 著錄名稱、卷期、頁數 | Journal of Applied Physics 103(4), pp.043720(7pages) |
| 摘要 | Enhanced electron field emission (EFE) properties for ultrananocrystalline diamond (UNCD) films grown on silicon substrate were achieved, especially due to the high dose N ion implantation. Secondary ion mass spectroscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy measurements indicated that the N ion implantation first expelled H−, induced the formation of disordered carbon (or defect complex), and then induced the amorphous phase, as the ion implantation dose increased. The postimplantation annealing process healed the atomic defects, but converted the disordered carbon to a stable defect complex, and amorphous carbon into a more stable graphitic phase. The EFE characteristics of the high dose (>1015 ions/cm2) ion-implanted UNCD were maintained at an enhanced level, whereas those of the low dose (<1014 ions/cm2) ion-implanted ones were reverted to the original values after the annealing process. Ion implantation over a critical dose (1×1015 ions/cm2) was required to improve the EFE properties of UNCD films. |
| 關鍵字 | |
| 語言 | en |
| ISSN | 0021-8979 1089-7550 |
| 期刊性質 | |
| 收錄於 | |
| 產學合作 | |
| 通訊作者 | Lin, I-nan |
| 審稿制度 | |
| 國別 | |
| 公開徵稿 | |
| 出版型式 | 紙本 電子版 |
| 相關連結 |
機構典藏連結 ( http://tkuir.lib.tku.edu.tw:8080/dspace/handle/987654321/42038 ) |